C3202 PDF Datasheet – 30V, 500mA, NPN Transistor – 2SC3202

Part Number: C3202, 2SC3202

Function: 30V, 500mA, Silicon NPN Transistor

Package: TO-92 Type

Manufacturer: KEC

Images:C3202 pdf datasheet

Description

C3202 is 30V, 500mA, NPN Transistor. Complementary to the 2SA1270. A Silicon NPN Epitaxial Planar Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

NPN Configuration:

1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.

2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.

3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.

Silicon NPN Epitaxial Planar Transistors are fundamental components in electronic circuits, playing a crucial role in amplification, signal processing, and digital logic. They are widely used in a vast array of electronic devices, including radios, amplifiers, computer processors, and many other applications where signal control and amplification are essential.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 35 V

2. Collector to Emitter Voltage: Vceo = 30 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 500 mA

5. Collector Dissipation : Pc = 500 mw

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications:

1. Low Frequency, Low power amplifiers

2. General-driver stage amplifiers

3. General purpose switching applications

 

C3202 PDF Datasheet