C3507 Transistor – NPN, Equivalent, Datasheet (2SC3507)

Part Number: C3507, 2SC3507

Function: 800V, 5A, NPN Transistor

Package: TOP-3F-A1 Type

Manufacturer: Panasonic

Images:

C3507 transistor

Description

This is Power Transistor. 2SC3507 is Silicon NPN triple diffusion planar type.

NPN Configuration:

1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.

2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.

3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.

■ Features

• High-speed switching

• High collector-base voltage (Emitter open) VCBO

• Satisfactory linearity of forward current transfer ratio hFE

• Full-pack package which can be installed to the heat sink with one screw

■ Absolute 21.0±0.5 φ 3.2±0.1 15.0±0.2 (3.5) Solder Dip 2.0±0.2 1.1±0.1 2.0±0.1 0.6±0.2 Maximum Ratings TC = 25°C Symbol VCBO VCES VCEO VEBO IC IB ICP PC Tj Tstg Ta = 25°C Rating 1 000 1 000 800 7 5 3 10 80 3.0 150 −55 to +150 °C °C Unit V V V V A A A W Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Base current Peak collector current Collector power dissipation 16.2±0.5 5.45±0.3 10.9±0.5 1 2 3 1: Base 2: Collector 3: Emitter EIAJ: SC-92 TOP-3F-A1 Package Junction temperature Storage temperature

■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter sustaining voltage – Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol Conditions

C3507 transistor datasheet panasonic

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 1000 V

2. Collector to Emitter Voltage : Vceo = 800 V

3. Emitter to Base Voltage : Vebo = 7 V

4. Collector Current : Ic = 5 A

5. Total Dissipation : Pc = 80 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications:

1. High breakdown voltage high-speed switching

C3507 PDF Datasheet

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