Part Number: C3507
Function: 2SC3507
Manufacturer: Panasonic
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Description
Power Transistors 2SC3507 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 15.0±0.3 (0.7) Unit: mm 5.0±0.2 (3.2) 11.0±0.2 ■ Features • High-speed switching • High collector-base voltage (Emitter open) VCBO • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw ■ Absolute 21.0±0.5 φ 3.2±0.1 15.0±0.2 (3.5) Solder Dip 2.0±0.2 1.1±0.1 2.0±0.1 0.6±0.2 Maximum Ratings TC = 25°C Symbol VCBO VCES VCEO VEBO IC IB ICP PC Tj Tstg Ta = 25°C Rating 1 000 1 000 800 7 5 3 10 80 3.0 150 −55 to +150 °C °C Unit V V V V A A A W Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Base current Peak collector current Collector power dissipation 16.2±0.5 5.45±0.3 10.9±0.5 1 2 3 1: Base 2: Collector 3: Emitter EIAJ: SC-92 TOP-3F-A1 Package Junction temperature Storage temperature ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter sustaining voltage – Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol Conditions VCB = 1 000 V, IE = 0 VEB = 7 V, IC = 0 VCE = 5 V, IC = 3 A IC = 3 A, IB = 0.6 A IC = 3 A, IB = 0.6 A VCE = 5 V, IC = 0.5 A, f = 1 MHz IC = 3 A IB1 = 0.6 A, IB2 = −1.2 A VCC = 250 V 6 1.0 2.5 0.5 6 1.5 1.5 Min 800 50 50 Typ Max Unit V µA µA V V MHz µs µs µs VCEO(SUS) IC = 0.5 A, L = 50 mH ICBO IEBO hFE VCE(sat) VBE(sat) fT ton tstg tf Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: VCEO(SUS) test circuit 50 Hz/60 Hz X mercury relay L 120 Ω 6V Y 1Ω 15 V SJD00106BED G Publication date: February 2003 1 2SC3507 PC Ta 100 10 (1)TC=Ta (2)With a 100×100×2mm Al heat sink (3)Without heat sink (PC=3W) TC=25˚C IC VCE Collector-emitter saturation voltage VCE(sat) (V) 100 VCE(sat) IC IC/IB=5 Collector power dissipation PC (W) 80 (1) 8 60 Collector current IC (A) 10 6 IB=800mA 500mA 400mA 300mA 200mA TC=100˚C 1 25˚C –25˚C 40 4 0.1 20 (2) (3) 2 100mA 20mA 0 0 25 50 75 100 125 150 0 0 2 4 6 8 10 12 0.01 0.01 0.1 1 10 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Collector current IC (A) VBE(sat) IC 100 IC/IB=5 hFE IC 1 000 VCE=5V fT I C 1 000 VCE=5V f=1MHz TC=25˚C Base-emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 10 Transition frequency fT (MHz) 100 TC=100˚C 25˚C –25˚C 100 1 TC=–25˚C 100˚C 25˚C 10 10 0.1 1 1 0.01 0.01 0.1 1 10 0.1 0.01 0.1 1 10 0.1 0.01 0.1 1 10 Collector cur […]
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