Part Number: C3507, 2SC3507
Function: 800V, 5A, NPN Transistor
Package: TOP-3F-A1 Type
Manufacturer: Panasonic
Images:
Description
This is Power Transistor. 2SC3507 is Silicon NPN triple diffusion planar type.
:
■ Features
• High-speed switching
• High collector-base voltage (Emitter open) VCBO
• Satisfactory linearity of forward current transfer ratio hFE
• Full-pack package which can be installed to the heat sink with one screw
■ Absolute 21.0±0.5 φ 3.2±0.1 15.0±0.2 (3.5) Solder Dip 2.0±0.2 1.1±0.1 2.0±0.1 0.6±0.2 Maximum Ratings TC = 25°C Symbol VCBO VCES VCEO VEBO IC IB ICP PC Tj Tstg Ta = 25°C Rating 1 000 1 000 800 7 5 3 10 80 3.0 150 −55 to +150 °C °C Unit V V V V A A A W Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Base current Peak collector current Collector power dissipation 16.2±0.5 5.45±0.3 10.9±0.5 1 2 3 1: Base 2: Collector 3: Emitter EIAJ: SC-92 TOP-3F-A1 Package Junction temperature Storage temperature
■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter sustaining voltage – Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol Conditions
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage : Vcbo = 1000 V
2. Collector to Emitter Voltage : Vceo = 800 V
3. Emitter to Base Voltage : Vebo = 7 V
4. Collector Current : Ic = 5 A
5. Total Dissipation : Pc = 80 W
6. Junction Temperature : Tj = 150°C
7. Storage Temperatue : Tsg = -55 ~ +150°C
Applications:
1. High breakdown voltage high-speed switching
C3507 PDF Datasheet
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