C5988 Datasheet – Silicon NPN transistor epitaxial type

Part Number: C5988

Function: Silicon NPN transistor epitaxial type



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C5988 image


C5988 Silicon NPN transistor epitaxial type C5988 [ Applications ] High current amplifier [ Feature ] Collector current IC= 6A Very low collector saturation voltage VCE(sat)= 550mV (Max.) at IC= 6A, IB= 300mA Exellent gain characteristics specified up to 10 ampers PNP complementary pair with A5988 [ Absolute maximum ratings (Ta=25C) ] Characteristic Symbol Maximum ratings Collector-base voltage VCBO 150 Collector-emitter voltage VCEO 60 Emitter-base voltage VEBO 6 Collector current (DC) IC 6 Collector current (Pulse) ICP 20 Junction temperature Tj 150 Storage temperature Tstg -55 to 150 Unit V V V A A C C [ Electrical characteristics (Ta=25C) ] Characteristic Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 150 170 – V IC= 100uA Collector-emitter breakdown voltage BVCEO 60 70 – V IC= 10mA Emitter-base breakdown voltage BVEBO 6 8 – V IE= 100uA Collector cut-off current ICBO – – 50 nA VCB= 120V Emitter cut-off curre […]

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C5988 Datasheet

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