Part Number: FGA25N120AN
Function: 1200V, 25A, IGBT
Package: TO-3P Type
Manufacturer: Fairchild Semiconductor
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Description
The FGA25N120AN is 1200V, 25A, IGBT (Insulated Gate Bipolar Transistor).
Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS).
An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow. When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch.
The IGBT has several advantages over traditional power semiconductors, such as bipolar transistors and MOSFETs, making it a popular choice for high-power applications. These advantages include high voltage and current handling capability, fast switching speed, low switching losses, and low on-state resistance.
Features
1. High speed switching
2. Low saturation voltage : VCE(sat) = 2.5 V @ IC = 25A
3. High input impedance
When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch.
These advantages include high voltage and current handling capability, fast switching speed, low switching losses, and low on-state resistance.
FGA25N120AN PDF Datasheet
