FTP08N06A Datasheet – 55V, 120A, MOSFET (Transistor)

This post explains for the MOSFET.

The Part Number is FTP08N06A.

The function of this transistor is 55V, 120A, N-Channel MOSFET.

The Package is TO-220 Type.

Manufacturer: IPS (InPower Semiconductor)


FTP08N06A mosfet datasheet


The FTP08N06A is a N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Toshiba.
It is commonly used as a switch in power electronics applications, where its low on-resistance
and fast switching speed make it well-suited for high-efficiency power conversion systems.

The FTP08N06A has a maximum drain-source voltage of 55V and a maximum drain current of 120A,
making it suitable for high voltage, high current applications.


• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width C

1 page
FTP08N06A image

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 55 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 120 A
4. Drain power dissipation : PD = 230 W
5. Single pulse avalanche energy : Eas = 760 mJ
6. Channel temperature: Tch = 175 °C
7. Storage temperature: Tstg = -55 to +175 °C


FTP08N06A pinout transistor


• Automotive

• DC Motor Control

• Class D Amplifier

• Uninterruptible Power Supply (UPS)

FTP08N06A Datasheet PDF