FTP08N06A PDF Datasheet – 55V, 120A, MOSFET

This post explains for the MOSFET.

The Part Number is FTP08N06A.

The function of this transistor is 55V, 120A, N-Channel MOSFET.

The Package is TO-220 Type.

Manufacturer: IPS (InPower Semiconductor)

Images:

FTP08N06A mosfet datasheet

Description

The FTP08N06A is a N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Toshiba. It is commonly used as a switch in power electronics applications, where its low on-resistance and fast switching speed make it well-suited for high-efficiency power conversion systems.

The FTP08N06A has a maximum drain-source voltage of 55V and a maximum drain current of 120A, making it suitable for high voltage, high current applications.

An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

Features

• RoHS Compliant

• Low ON Resistance

• Low Gate Charge

• Peak Current vs Pulse Width C

Pinout:

FTP08N06A pinout transistor

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 55 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 120 A

4. Drain power dissipation : PD = 230 W

5. Single pulse avalanche energy : Eas = 760 mJ

6. Channel temperature: Tch = 175 °C

7. Storage temperature: Tstg = -55 to +175 °C

Applications:

• Automotive

• DC Motor Control

• Class D Amplifier

• Uninterruptible Power Supply (UPS)

FTP08N06A PDF Datasheet