FTW20N50A PDF Datasheet – N-Ch, 500V, 20A, MOSFET

Part Number: FTW20N50A

Function: 500V, 20A, N-Channel MOSFET

Package: TO-3P(N) Type

Manufacturer: IPS

Images:FTW20N50A pdf pinout

Description

FTW20N50A, the silicon N-channel Enhanced VD MOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P(N), which accords with the RoHS standard..

Features

1. Fast Switching

2. Low ON Resistance

3. Low Gate Charge (Typical Data:130nC)

4. Low Reverse transfer capacitances(Typical:65pF)

5. 100% Single Pulse avalanche energy Test

 

FTW20N50A datasheet mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 20 A

4. Total Power Dissipation: Pd = 230 W

5. Avalanche energy: Ear = 90 mJ

6. Channel temperature: Tch = 150 °C

7. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. Power switch circuit of electron ballast and adaptor

FTW20N50A PDF Datasheet