Part Number: FTW20N50A
Function: 500V, 20A, N-Channel MOSFET
Package: TO-3P(N) Type
Manufacturer: IPS
Images:
Description
FTW20N50A, the silicon N-channel Enhanced VD MOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P(N), which accords with the RoHS standard..
Features
1. Fast Switching
2. Low ON Resistance
3. Low Gate Charge (Typical Data:130nC)
4. Low Reverse transfer capacitances(Typical:65pF)
5. 100% Single Pulse avalanche energy Test
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 500 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 20 A
4. Total Power Dissipation: Pd = 230 W
5. Avalanche energy: Ear = 90 mJ
6. Channel temperature: Tch = 150 °C
7. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. Power switch circuit of electron ballast and adaptor