FTW20N50A PDF Datasheet – N-Ch, 500V, 20A, MOSFET

An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.

Part Number: FTW20N50A

Function: 500V, 20A, N-Channel MOSFET

Package: TO-3P(N) Type

Manufacturer: IPS

Images:FTW20N50A pdf pinout


FTW20N50A, the silicon N-channel Enhanced VD MOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P(N), which accords with the RoHS standard..


1. Fast Switching

2. Low ON Resistance

3. Low Gate Charge (Typical Data:130nC)

4. Low Reverse transfer capacitances(Typical:65pF)

5. 100% Single Pulse avalanche energy Test


FTW20N50A datasheet mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 20 A

4. Total Power Dissipation: Pd = 230 W

5. Avalanche energy: Ear = 90 mJ

6. Channel temperature: Tch = 150 °C

7. Storage temperature: Tstg = -55 to +150 °C



1. Power switch circuit of electron ballast and adaptor

FTW20N50A PDF Datasheet