K3569 Datasheet PDF – 600V, 10A, MOSFET, Transistor

This is one of the transistor types.

This part name is K3569, 2SK3569.

The function has 600V, 10A, N-Channel MOSFET.

The package is TO-220 Type

The manufacturer of the product is Toshiba.

See the preview image and the PDF file for more information.




K3569 is 600V, 10A, N-Channel MOS Field Effect Transistor(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.


1.  Low drain-source ON resistance: RDS (ON)= 0.54Ω(typ.)

2.  High forward transfer admittance: |Yfs| = 8.5S (typ.)

3.  Low leakage current: IDSS= 100 μA (VDS= 600 V)

4.  Enhancement mode: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)


K3569 Pinout

K3569 datasheet


Absolute Maximum Ratings (Ta =25°C)

1. Drain-source voltage : VDSS = 600 V

2. Drain-gate voltage (RGS =20 kΩ): VDGR = 600 V

3. Gate-source voltage : VGSS = ±30 V

4. Drain current DC : ID = 10 A

5. Drain power dissipation (Tc =25°C) : PD = 45 W

6. Single pulse avalanche energy : EAS = 363 mJ

7. Avalanche current : IAR = 10 A

8. Channel temperature: Tch = 150 °C

9. Storage temperature range : Tstg = -55~150 °C


K3569 Applications

1. Switching Regulator


K3569 Datasheet PDF


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