K3569 Datasheet PDF – 600V, 10A, MOSFET, Transistor

This is one of the transistor types.

This part name is K3569, 2SK3569.

The function has 600V, 10A, N-Channel MOSFET.

The package is TO-220 Type

The manufacturer of the product is Toshiba.

See the preview image and the PDF file for more information.

Image

K3569 MOSFET

Description

K3569 is 600V, 10A, N-Channel MOS Field Effect Transistor(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.

Features

1.  Low drain-source ON resistance: RDS (ON)= 0.54Ω(typ.)

2.  High forward transfer admittance: |Yfs| = 8.5S (typ.)

3.  Low leakage current: IDSS= 100 μA (VDS= 600 V)

4.  Enhancement mode: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

 

K3569 Pinout

K3569 datasheet

 

Absolute Maximum Ratings (Ta =25°C)

1. Drain-source voltage : VDSS = 600 V

2. Drain-gate voltage (RGS =20 kΩ): VDGR = 600 V

3. Gate-source voltage : VGSS = ±30 V

4. Drain current DC : ID = 10 A

5. Drain power dissipation (Tc =25°C) : PD = 45 W

6. Single pulse avalanche energy : EAS = 363 mJ

7. Avalanche current : IAR = 10 A

8. Channel temperature: Tch = 150 °C

9. Storage temperature range : Tstg = -55~150 °C

 

K3569 Applications

1. Switching Regulator

 

K3569 Datasheet PDF

 

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