Part Number: HY1606A
Function: 60V, 60A, N-Channel Enhancement Mode MOSFET
Package: TO-220-3L Type
Manufacturer: HOOYI Semiconductor
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Description
The HY1606AP is N-Channel Enhancement Mode MOSFET.
Features
1. 60V/ A, RDS(ON) =10.5 mW (typ.) @ VGS =10V
2. Avalanche Rated
3. Reliable and Rugged
4. Lead Free and Green Devices Available (RoHS Compliant)
5. Power Management for Inverter Systems
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 60 V
2. Gate to source voltage: VGSS = ± 25 V
3. Drain current: ID = 65 A
4. Maximum Power Dissipation: Pd = 130 W
5. Channel temperature: Tch = 175 °C
6. Storage temperature: Tstg = -55 to +175 °C
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