Part Number: ICE20N170B
Function: N-Channel Enhancement Mode MOSFET
Package: TO-263 Type
Manufacturer: Micross Components
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Description
ICE20N170B is 600V, 20A, N-Channel Enhancement Mode MOSFET(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.
When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.
N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.
Features
• Low rDS(on)
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
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Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 20 A
4. Power Dissipation : Ptot = 208 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
ICE20N170B PDF Datasheet
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