MXP4004BTS PDF Datasheet – 40V, 170A, N-Ch, MOSFET

Part Number: MXP4004BTS

Function: 40V, 170A, N-Channel MOSFET

Package: TO-220 Type

Manufacturer: MaxPower Semiconductor


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MXP4004BTS image


This is 40V N-Channel MOSFET.


1. Power Supply

2. DC-DC Converters

3. DC-AC Inverters


1. Lead Free

2. Low RDS(ON) to Minimize Conductive Loss

3. Low Gate Charge for Fast Switching Application

4. Optimized V(BR)DSS Ruggedness

MXP4004BTS VDS 40V RDS(ON)(MAX) 3mΩ ID 170A Ordering Information Park Number Package MXP4004BTS TO220 Brand MXP TO220 Pin Definition and Inner Circuit

Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-to-Source Voltage 40 ID Continuous Drain Current Silicon Limited Package Limited 170 80 IDM Pulsed Drain Current @VGS=10V 679 PD Power Dissipation 231 VGS Gate-to-Source Voltage +/-20 TJ and Tstg Operating Junction and Storage Temperature Range -55 to 175 Unit V A W V ℃ Avalanche Characteristics Symbol Parameter EAS① Single Pulse Avalanche Energy (VDS=20V, VGS=10V, Rg=25Ω, L=1mH) IAS Single Pulse Avalanche Current TC=25℃ unless otherwise specified Value 200 Figure 9 Unit mJ A Thermal Resistance Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient Max Unit 0.65 ℃/W 62 ℃/W ① : Guarantee number. ©MaxPower Semiconductor Inc. Page1 MXP4004BTS Preliminary Dec. 2011 40V N-Channel MOSFET MXP4004BTS OFF Characteristics Symbol Parameter TJ=25℃ unless otherwise specified Min Typ Max Unit V(BR)DSS Drain-to-Source Breakdown Voltage 40 – -V IDSS Drain-to-Source Leakage Current – – 1 100 uA IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage […]

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MXP4004BTS Datasheet