Part Number: AP30G120ASW
Function: 1200V, 30A, N-CHANNEL IGBT
Package: TO-3P Type
Manufacturer: Advanced Power Electronics Corp
Image and Pinouts:
Description
This is INSULATED GATE BIPOLAR TRANSISTOR.
Features
1. High Speed Switching
2. Low Saturation Voltage
3. CO-PAK, IGBT With FRD
4. RoHS Compliant
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage: Vces = 1200 V
2. Gate to emitter voltage: Vges = ± 30 V
3. Collector current : Ic = 30 A
4. Collector dissipation : Pd = 208 W (Tc = 25°C)
5. Junction temperature : Tj = -55 to +150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Other data sheets are available within the file: 30G120ASW, AP30G120
AP30G120ASW Datasheet PDF Download
