Part Number: B861, 2SB861
Function: – 150V, – 2A, PNP Transistor
Package: TO-220AB Type
Manufacturer: Hitachi Semiconductor
Images:
1. Base 2. Collector (Flange) 3. Emitter
Description
B861 is 150V, 2A, Silicon PNP Transistor. Silicon PNP Triple Diffused Transistor is a type of power transistor that utilizes silicon as the semiconductor material and belongs to the PNP (Positive-Negative-Positive) bipolar junction transistor (BJT) family.
1. Voltage Rating: The transistor has a maximum voltage rating of 150 volts (V), which means it can withstand voltages up to 150V without breaking down or sustaining damage.
2. Current Rating: The transistor is rated to handle a maximum collector current (IC) of 2 amperes (A). This specifies the maximum current that can flow through the transistor between its collector and emitter terminals under specified operating conditions.
Outline :
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = – 200 V
2. Collector to Emitter Voltage: Vceo = – 150 V
3. Emitter to Base Voltage: Vebo = – 6 V
4. Collector Current: Ic = – 2 A
5. Collector Dissipation : Pc = 1.8 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
This transistor is a PNP type, which means it uses a combination of p-type and n-type semiconductor materials. In a PNP transistor, a negative voltage applied to the base relative to the emitter turns the transistor on, allowing current to flow from the collector to the emitter.
Application:
1. Low frequency power amplifier color TV vertical deflection output complementary pair with 2SD1138
B861 PDF Datasheet
