What is BD139? 80V, 1.5A, NPN Transistor ( PDF )

This post explains for the semiconductor BD139.

What is BD139?

This transistor is housed in a TO-126 package and has a maximum collector current of 1.5A, a maximum collector-emitter voltage of 80V, and a maximum power dissipation of 12.5W.

Low noise and high gain characteristics, which make it ideal for use in audio amplifiers and other low-level signal amplification applications. Additionally, its low saturation voltage and fast switching speed make it suitable for use in high-speed switching circuits.

Part Number: BD139, BD137, BD135

Function: 80V, 1.5A, NPN Epitaxial Silicon Transistor

Package: TO-126 3L Type

Manufacturer: Fairchild Semiconductor

Image

BD139 image

Features

1. NPN bipolar junction transistor
2. Low power, medium voltage device
3. Maximum collector current of 1.5A
4. Maximum collector-emitter voltage of 80V
5. Maximum power dissipation of 12.5W
6. Housed in a TO-126 package
7. Low noise and high gain characteristics
8. Low saturation voltage and fast switching speed
9. Suitable for a wide range of applications
10. Complement to BD136, BD138 and BD140 respectively

Advantages Vs Disadvantages

Advantages of BD139:

1. Versatile and widely used in the electronics industry
2. Reliable and cost-effective
3. Ideal for low-level signal amplification applications
4. Suitable for use in high-speed switching circuits
5. Readily available

Disadvantages:

1. Maximum power dissipation of 12.5W may not be sufficient for some high-power applications

2. Maximum collector-emitter voltage of 80V may not be suitable for some high-voltage applications

 

BD139 datasheet

Part Number  ->   Marking
BD13516S  ->  BD135-16
BD1356STU  ->  BD135-6
BD13510STU  ->  BD135-10
BD13516STU  ->  BD135-16
BD13716STU  ->  BD137-16
BD13710STU  ->  BD137-10
BD13716S  ->  BD137-16
BD13916STU  ->  BD139-16
BD13910S  ->  BD139-10
BD13916S  ->  BD139-16
BD1396STU  ->  BD139-6
BD13910STU  ->  BD139-10

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 80 V

2. Collector to Emitter Voltage: Vceo = 80 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 1.5 A

5. Collector Dissipation : Pc = 12.5 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -65 ~ +150°C

 

Applications:

1. Medium Power Linear and Switching

 

BD139 Datasheet

BD139 fairchild pdf


 

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