This post explains for the semiconductor BD139.
What is BD139?
This transistor is housed in a TO-126 package and has a maximum collector current of 1.5A, a maximum collector-emitter voltage of 80V, and a maximum power dissipation of 12.5W.
Low noise and high gain characteristics, which make it ideal for use in audio amplifiers and other low-level signal amplification applications. Additionally, its low saturation voltage and fast switching speed make it suitable for use in high-speed switching circuits.
Part Number: BD139, BD137, BD135
Function: 80V, 1.5A, NPN Epitaxial Silicon Transistor
Package: TO-126 3L Type
Manufacturer: Fairchild Semiconductor
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Features
1. NPN bipolar junction transistor
2. Low power, medium voltage device
3. Maximum collector current of 1.5A
4. Maximum collector-emitter voltage of 80V
5. Maximum power dissipation of 12.5W
6. Housed in a TO-126 package
7. Low noise and high gain characteristics
8. Low saturation voltage and fast switching speed
9. Suitable for a wide range of applications
10. Complement to BD136, BD138 and BD140 respectively
Advantages Vs Disadvantages
Advantages of BD139:
1. Versatile and widely used in the electronics industry
2. Reliable and cost-effective
3. Ideal for low-level signal amplification applications
4. Suitable for use in high-speed switching circuits
5. Readily available
Disadvantages:
1. Maximum power dissipation of 12.5W may not be sufficient for some high-power applications
2. Maximum collector-emitter voltage of 80V may not be suitable for some high-voltage applications
Part Number -> Marking
BD13516S -> BD135-16
BD1356STU -> BD135-6
BD13510STU -> BD135-10
BD13516STU -> BD135-16
BD13716STU -> BD137-16
BD13710STU -> BD137-10
BD13716S -> BD137-16
BD13916STU -> BD139-16
BD13910S -> BD139-10
BD13916S -> BD139-16
BD1396STU -> BD139-6
BD13910STU -> BD139-10
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 80 V
2. Collector to Emitter Voltage: Vceo = 80 V
3. Emitter to Base Voltage: Vebo = 5 V
4. Collector Current: Ic = 1.5 A
5. Collector Dissipation : Pc = 12.5 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -65 ~ +150°C
Applications:
1. Medium Power Linear and Switching