Part Number: BSS84AK
Marking : %VS
Function: 50 V, 180 mA P-channel Trench MOSFET
Package: SOT-23, TO-236AB Type
Manufacturer: NXP Semiconductors.
Image and Pinouts:
Description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
1. Logic-level compatible
2. Very fast switching
3. Trench MOSFETtechnology
4. ESD protection up to 1 kV
5. AEC-Q101 qualified
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = – 50 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = – 180 mA
4. Total Power Dissipation : Pch = 350 mW
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -65 to +150 °C
Applications:
1. Relay driver
2. High-speed line driver
3. High-side loadswitch
4. Switching circuits
Other data sheets are available within the file: BSS84A, BSS84
BSS84AK Datasheet PDF Download
