BUH516 Datasheet PDF – 600V, 8A, NPN Transistor – ST

Part Number: BUH516 ( = BU508AFI, THD277HI, 3DD3402 )

Function: NPN Silicon Multiepitaxial Mesa Transistor, 600V, 8A

Package: ISOWATT218 type

Manufacturer: STMicroelectronics



This device is manufactured using Multiepitaxial Mesa technology for cost-effective high
performance and uses a Hollow Emitter structure to enhance switching speeds


1. High voltage, high speed
2. Low collector saturation voltage


1. Horizontal deflection stage in standard and high reslolution displays for TV’s and monitors.
2. Switching power supplies for TV’s and monitors.


BUH516 pinout

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1700 V
2. Collector to Emitter Voltage: Vceo = 600 V
3. Emitter to Base Voltage: Vebo = 6 V
4. Collector Current: Ic = 8 A
5. Junction Temperature: Tj = 150°C
6. Storage Temperature: Tsg = -55 ~ +150°C

BUH516 Datasheet

Reference BUH517 PDF : 1700V, 60W




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