Part Number: BUH516 ( = BU508AFI, THD277HI, 3DD3402 )
Function: NPN Silicon Multiepitaxial Mesa Transistor, 600V, 8A
Package: ISOWATT218 type
Manufacturer: STMicroelectronics
Description
This device is manufactured using Multiepitaxial Mesa technology for cost-effective high
performance and uses a Hollow Emitter structure to enhance switching speeds
Features
1. High voltage, high speed
2. Low collector saturation voltage
Applications
1. Horizontal deflection stage in standard and high reslolution displays for TV’s and monitors.
2. Switching power supplies for TV’s and monitors.
Pinout
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 1700 V
2. Collector to Emitter Voltage: Vceo = 600 V
3. Emitter to Base Voltage: Vebo = 6 V
4. Collector Current: Ic = 8 A
5. Junction Temperature: Tj = 150°C
6. Storage Temperature: Tsg = -55 ~ +150°C
BUH516 Datasheet
Reference BUH517 PDF : 1700V, 60W