Part Number: C2328
Function: 30V, Silicon NPN Epitaxial Transistor
Chip size: 760um×760um
Manufacturer: ETC
Images:
Description
This is Silicon NPN Epitaxial Transistor. The C2328 is designed for use in power amplifier applications and power switching applications.
NPN transistors are bipolar junction transistors (BJT), meaning they have a structure consisting of three regions of alternating P-type and N-type semiconductors.
Features
1. Low collector saturation voltage
2. Complementary to A1020
Chip Appearance :
Chip Size Chip Thickness Bonding Pad Size Front Metal Backside Metal Scribe line width Wafer Size Base Emitter 760um×760um 210±20um 160×170um 130×260um Al Au(As) 60um 6 inch Electrical Characteristics( Ta=25℃) Characteristic Symbol Test Condition Collector Cutoff Current Emitter Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain ICBO IEBO BVCBO BVCEO BVEBO hFE VCB=30V, IE=0 VEB=5V, IC=0 IC=0.1mA IC=10mA IE=0.1mA VCE=2V, IC=0.5A Collector Saturation Voltage VCE(sat) IC=1A, IB=50mA Min Max 0.1 0.1 30 30 5.0 80 400 0.5 Unit uA uA V V V V May.2004 Version :0.0 Page 1 of 1 […]
C2328 PDF Datasheet
