This post explains for the NPN Transistor.
The Part Number is C2694, 2SC2694.
The function of this semiconductor is RF Power Transistor.
Manufacturer: Mitsubishi Electric Semiconductor
Preview images:
Description
The C2694 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications.
NPN Configuration:
1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.
2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.
3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.
Features
1. High power gain
2. Emitter ballasted contruction and gold metallization for high reliability and good performances.
3. Low thermal resistance ceramic package with flange.
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 35 V
2. Collector to Emitter Voltage: Vceo = 17 V
3. Emitter to Base Voltage: Vebo = 4 V
4. Collector Current: Ic = 20 A
5. Collector Dissipation : Pc = 5.5 W
6. Junction Temperature: Tj = 175°C
7. Storage Temperature: Tsg = -55 ~ +175°C
Application:
1. 50 to 60 watts output power amlifiers in VHF band mobile radio applications.
C2694 Transistor Datasheet
