C2694 Transistor – 17V, 20A, NPN – Mitsubishi

This post explains for the NPN Transistor.

The Part Number is C2694, 2SC2694.

The function of this semiconductor is RF Power Transistor.

Manufacturer: Mitsubishi Electric Semiconductor

Preview images :

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C2694 transistor


The C2694 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications.

NPN Configuration:

1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.

2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.

3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.


1. High power gain

2. Emitter ballasted contruction and gold metallization for high reliability and good performances.

3. Low thermal resistance ceramic package with flange.


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C2694 pinout datasheet

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 35 V

2. Collector to Emitter Voltage: Vceo = 17 V

3. Emitter to Base Voltage: Vebo = 4 V

4. Collector Current: Ic = 20 A

5. Collector Dissipation : Pc = 5.5 W

6. Junction Temperature: Tj = 175°C

7. Storage Temperature: Tsg = -55 ~ +175°C



1. 50 to 60 watts output power amlifiers in VHF band mobile radio applications.

C2694 Transistor Datasheet