Part Number: C3356
Function: 12V, NPN RF Transistor.
Package: Minimode Type
Manufacturer: Renesas Electronics
Image:
Description
This is 12V, 100mA, NPN Silicon RF Transistor.
Features
1. Low noise and high gain : NF = 1.1 dB TYP., Ga= 11 dB TYP. @ VCE= 10 V, IC= 7 mA, f = 1 GHz
2. High power gain : MAG = 13 dB TYP. @ VCE= 10 V, IC= 20 mA, f = 1 GHz
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 20 V
2. Collector to Emitter Voltage: Vceo = 12 V
3. Emitter to Base Voltage: Vebo = 3 V
4. Collector Current: Ic = 100 mA
5. Total Power Dissipation : Ptot = 200 mW
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -65 ~ +150°C
Pinouts:
Applications:
1. Low noise amplifier at VHF, UHF and CATV band
C3356 Datasheet PDF Download
Other data sheets are available within the file:
2SC3356, 2SC3356-A, 2SC3356-T1B, 2SC3356-T1B-A