C3356 Transistor – 12V, 100mA, NPN, Renesas ( Datasheet )

Part Number: C3356

Function: 12V, NPN RF Transistor.

Package: Minimode Type

Manufacturer: Renesas Electronics

Image:

C3356 datasheet

Description

This is 12V, 100mA, NPN Silicon RF Transistor.

Features

1. Low noise and high gain : NF = 1.1 dB TYP., Ga= 11 dB TYP. @ VCE= 10 V, IC= 7 mA, f = 1 GHz

2. High power gain : MAG = 13 dB TYP. @ VCE= 10 V, IC= 20 mA, f = 1 GHz

components

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 20 V

2. Collector to Emitter Voltage: Vceo = 12 V

3. Emitter to Base Voltage: Vebo = 3 V

4. Collector Current: Ic = 100 mA

5. Total Power Dissipation : Ptot = 200 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -65 ~ +150°C

Pinouts:

components

Applications:

1. Low noise amplifier at VHF, UHF and CATV band

C3356 Datasheet PDF Download


C3356 pdf

Other data sheets are available within the file:

2SC3356, 2SC3356-A, 2SC3356-T1B, 2SC3356-T1B-A