C4475 Datasheet PDF – 1800V, 3mA, NPN Transistor

Part Number: C4475

Function: 1800V, 3mA, NPN Transistor

Package: TO-220AB Type

Manufacturer: SANYO (Panasonic)

Image and Pinouts:

C4475 datasheet



The C4475 is 1800V, 3mA, NPN Silicon Transistor.

A NPN transistor is a type of bipolar junction transistor (BJT) that consists of two p-type semiconductor materials separated by a single n-type material.

Characteristics of NPN Transistors :

1. Bipolar Junction : NPN transistors are bipolar junction transistors (BJT), meaning they have a structure consisting of three regions of alternating P-type and N-type semiconductors.

2. Current Amplification : NPN transistors are designed to amplify electrical current, and can be used in a wide range of electronic applications such as amplifiers, switches, and oscillators.

3. Forward Biased : In order to operate, the base-emitter junction of an NPN transistor must be forward biased, meaning that the base must be connected to a positive voltage relative to the emitter.

4. High Input Impedance : NPN transistors have a high input impedance, which means that they are less likely to draw current from the input source, and are therefore less likely to cause a drop in voltage across the source.



1. High breakdown voltage (Vceo min=1800V).

2. Small Cob(Cob typ=1.4pF).

3. Wide ASO.

4. High reliability (Adoption of HVP process).

Absolute Maximum Ratings at Ta = 25°C

1. Collector-to-Base Voltage : VCBO = 2000 V
2. Collector-to-Emitter Voltage : VCEO = 1800 V
3. Emitter-to-Base Voltage : VEBO = 5 V
4. Collector Current : IC = 3 mA
5. Collector Current (Pulse) : ICP = 10 mA
6. Collector Dissipation : PC = 1.75 W


1. High voltage amplifier.

2. High voltage switching.

3. Dynamic focus


Other data sheets are available within the file: 2SC4475

C4475 Datasheet PDF Download

C4475 pdf