Part Number: C4475
Function: 1800V, 3mA, NPN Transistor
Package: TO-220AB Type
Manufacturer: SANYO (Panasonic)
Image and Pinouts:
Description
The C4475 is 1800V, 3mA, NPN Silicon Transistor.
A NPN transistor is a type of bipolar junction transistor (BJT) that consists of two p-type semiconductor materials separated by a single n-type material.
Characteristics of NPN Transistors :
1. Bipolar Junction : NPN transistors are bipolar junction transistors (BJT), meaning they have a structure consisting of three regions of alternating P-type and N-type semiconductors.
2. Current Amplification : NPN transistors are designed to amplify electrical current, and can be used in a wide range of electronic applications such as amplifiers, switches, and oscillators.
3. Forward Biased : In order to operate, the base-emitter junction of an NPN transistor must be forward biased, meaning that the base must be connected to a positive voltage relative to the emitter.
4. High Input Impedance : NPN transistors have a high input impedance, which means that they are less likely to draw current from the input source, and are therefore less likely to cause a drop in voltage across the source.
Features
1. High breakdown voltage (Vceo min=1800V).
2. Small Cob(Cob typ=1.4pF).
3. Wide ASO.
4. High reliability (Adoption of HVP process).
Absolute Maximum Ratings at Ta = 25°C
1. Collector-to-Base Voltage : VCBO = 2000 V
2. Collector-to-Emitter Voltage : VCEO = 1800 V
3. Emitter-to-Base Voltage : VEBO = 5 V
4. Collector Current : IC = 3 mA
5. Collector Current (Pulse) : ICP = 10 mA
6. Collector Dissipation : PC = 1.75 W
Applications:
1. High voltage amplifier.
2. High voltage switching.
3. Dynamic focus
Other data sheets are available within the file: 2SC4475
C4475 Datasheet PDF Download
