The IGBT is insulated-gate bipolar transistor.

This is one of the transistor types.

Part Number: IHW30N160R2

Marking : H30R1602

Function: 1600V, 30A, IGBT ( Transistor )

Pacakge : TO-247 Type

Manufacturer: Infineon Technologies AG

Image

Description

This is 1600V, 30A, TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode.

Features

1. Powerful monolithic Body Diode with very low forward voltage

2. Body diode clamps negative voltages

3. Trench and Fieldstop technology for 1600 V applications offers :
(1) Very tight parameter distribution
(2) High ruggedness, temperature stable behavior

4. NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)

5. Low EMI

6. Qualified according to JEDEC for target applications

7. Pb-free lead plating; RoHS compliant

Absolute maximum ratings ( Ta=25°C )

1. Collector-emitter voltage : Vce = 1600 V

2. DC collector current : Ic = 60 V

3. Pulsed collector current : Icpuls = 90 A

4. Gate-emitter voltage : Vge = ± 20 V

5. Power dissipation : Ptot = 312 W

6. Operating junction temperature : Tj = -40 ~ +175°C

Pinouts:

Applications:

1. Inductive Cooking

2. Soft Switching

 

Other data sheets are available within the file: IHW30N160R

H30R1602 Datasheet PDF Download

 

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