Part Number: 2SK3158

Function: 150V, 30A, N-Channel MOSFET

Package: TO-220AB Type

Manufacturer: Hitachi ( Renesas Electronics )

Pinouts:

Description

The 2SK3158 is 150V, 30A, Silicon N Channel MOSFET.

Features

1. Low on-resistance : RDS = 35mΩ typ.

2. High speed switching

3. 4V gate drive device can be driven from 5V source

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 150 V

2. Gate to source voltage: VGSS = ±20 V

3. Drain current: ID = 30 A

4. Drain peak current : ID(pulse) = 120 A

5. Body-drain diode reverse drain current : IDR = 30 A

6. Avalanche current : IAP  = 30 A

7. Avalanche energy : EAR  = 67 mJ

8. Channel dissipation: Pch  = 100 W

Applications:

1. High Speed Power Switching

Other data sheets are available within the file: K3158

2SK3158 Datasheet PDF Download

 

Part Number: K1317, 2SK1317

Function: 1500V, 2.5A, N-Channel MOSFET

Package: TO-3P Type

Manufacturer: Hitachi

Image

Description

This is 1500V, 2.5A, Silicon N-Channel MOSFET.

Features

1. High breakdown voltage VDSS= 1500 V

2. High speed switching

3. Low drive current

4. No secondary breakdown

5.  Suitable for switching regulator, DC-DC converter and motor driver

 

Application

1. High speed power switching

 

Pinout

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 1500 V

2. Gate to source voltage : VGSS = ±20 V

3. Drain current : ID = 2.5 A

4. Drain peak current : ID(pulse) = 7A

5. Body to drain diode reverse drain current : IDR = 2.5 A

6. Channel dissipation: Pch = 100 W

7. Channel temperature: Tch = 150 °C

 

K1317 Datasheet PDF