D667 Datasheet – 2SD667, 80V, 1A, NPN Transistor – Hitachi

Part Number: D667, 2SD667

Function: 80V, 1A, NPN Transistor

Package: TO-92MOD Package

Manufacturer: Hitachi Semiconductor

Image and Pinouts: D667

Description

This is 80V, 1A, Silicon NPN Epitaxial Transistor.

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 120 V
2. Collector to Emitter Voltage: Vceo = 80 V
3. Emitter to Base Voltage: Vebo = 5 V
4. Collector Current: Ic = 1 A
5. Collector Dissipation : Pc = 0.9 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

 

Application:

•  Low frequency power amplifier
•  Complementary pair with 2SB647/A

D667 Datasheet

D667 Datasheet


 

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1SS198 Datasheet PDF – 10V, 30mA, Schottky Barrier Diode

Part Number: 1SS198, Marking : 2

Function: Silicon Schottky Barrier Diode for Various Detector, High Speed Switching

Package: MHD Type

Manufacturer: Hitachi -> Renesas Electronics

Image and Pinouts:

1SS198 datasheet

Description

This is 10V, 30mA, Schottky Barrier Diode.

Features

1. Detection efficiency is very good.

2. Small temperature coefficient.

3. Small glass package (MHD) enables easy mounting and high reliability.

1SS198 Schottky Barrier Diode

Absolute Maximum Ratings (Ta = 25°C)

1. Reverse voltage : VR = 10 V
2. Average forward current : Io = 30 mA
3. Junction temperature : Tj = 125 °C
4. Storage temperature: Tstg = -55 to +125 °C

1SS198 Datasheet PDF Download


1SS198 pdf

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