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2B0565 PDF Datasheet – 650V, MOS Transistor, ICE2B0565

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Part Number: ICE2B0565

Function: 650V, Off-Line SMPS Current Mode Controller

Package: DIP 8 Pin Type

Manufacturer: Infineon Technologies

Images:2B0565 pdf transistor

 

Description

The 2B0565 is 650V, Off-Line SMPS Current Mode Controller with integrated 650V CoolMOS Power Management & Supply. A Switched-Mode Power Supply (SMPS) Current Mode Controller is a critical component in the control circuitry of a switching power supply. It is responsible for regulating the output voltage by monitoring and controlling the current flowing through the power supply’s switching elements (typically transistors or MOSFETs) to maintain stable and efficient operation.

The second generation CoolSET-F2 provides several special enhancements to satisfy the needs for low power standby and protection features. In standby mode frequency reduction is used to lower the power consumption and support a stable output voltage in this mode. The frequency reduction is limited to 20kHz/21.5 kHz to avoid audible noise. In case of failure modes like
open loop, overvoltage or overload due to short circuit the device switches in Auto Restart Mode which is controlled by the internal protection unit.

 

Features

1. 650V avalanche rugged CoolMOS

2. Only few external components required

3. Input Vcc Undervoltage Lockout

4. 67kHz/100kHz switching frequency

5. Max duty cycle 72%

6. Overload and Open Loop Protection

7. Overvoltage Protection during Auto Restart

2B0565 PDF Datasheet

TSF8N60M PDF Datasheet – 600V, 7.5A, N-Channel MOSFET

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Part Number: TSF8N60M

Function: 600V, 7.5A, N-Channel MOSFET

Package: TO-220, TO-220F Type

Manufacturer: Truesemi

Images:TSF8N60M pdf pinout

Description

TSF8N60M is 600V, 7.5A, N-Channel MOSFET.

This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

 

Features

1. 7.5A, 600V, RDS(on)=1.2Ω@VGS=10V

2. Gate charge (Typical 30nC)

3. High ruggedness

4. Fast switching

5. 100% AvalancheTested

6. Improved dv/dt capability

TSF8N60M datasheet transistor

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 7.5 A

4. Total Power Dissipation: Pd = 55 W

5. Avalanche energy: Ear = 15.5 mJ

6. Channel temperature: Tch = 150 °C

7. Storage temperature: Tstg = -55 to +150 °C

TSF8N60M PDF Datasheet