S24CS08A PDF Datasheet – 2-Wire CMOS Serial EEPROM

Part Number: S24CS08A, S-24CS08A

Function: 2-Wire CMOS Serial EEPROM

Package: DIP, SOP, TSSOP 8 Pin Type

Manufacturer: Seiko Instruments

Images:S24CS08A pdf memory

Description

The S-24CS01A, S-24CS02A, S-24CS04A, S24CS08A is a 2-wired, low power and wide range operation 1k bit, 2k bit, 4k bit and 8k bit E2PROM organized as 128 words × 8 bits, 256 words × 8 bits, 512 words × 8 bits and 1024 words × 8 bits in each. Page write and sequential read are available.

A CMOS serial EEPROM, also known as a CMOS EEPROM or simply a serial EEPROM, is a type of non-volatile memory device used to store small amounts of data that need to be retained even when power is removed. CMOS stands for Complementary Metal-Oxide-Semiconductor, which is a common semiconductor technology used in modern integrated circuits.

Characteristics

1. Non-Volatile Memory: Serial EEPROMs are non-volatile memory devices, meaning they retain data even when the power supply is disconnected. This makes them suitable for storing critical configuration data, calibration settings, or other information that should not be lost in the event of a power outage.

2. Serial Interface: These EEPROMs communicate with microcontrollers or other digital devices using a serial communication protocol, such as I2C (Inter-Integrated Circuit) or SPI (Serial Peripheral Interface). The serial interface simplifies integration into digital systems and allows for easy read and write operations.

Features

• Low power consumption Standby : 2.0 µA Max. (VCC=5.5 V) Read : 0.8 mA Max. (VCC=5.5 V)

• Operating voltage range Read : 1.8 to 5.5 V (at −40 to +85°C) Write : 2.7 to 5.5 V (at −40 to +85°C)

• Page write : 8 bytes / page (S-24CS01A/02A) 16 bytes / page (S-24CS04A/08A)

• Sequential read

• Operating Frequency : 400 kHz (VCC=5 V±10 %, at −40 to +85°C)

• Write disable function when power supply voltage is low

• Endurance: 107 cycles/word (at +25°C) write capable, 106 cycles/word (at +85°C), 3 × 105
cycles/word (at +105°C)

• Data retention: 10 years (after rewriting 106 cycles/word at +85°C)

• S-24CS01A : 1k bit

• S-24CS02A : 2k bit

• S-24CS04A : 4k bit

• S-24CS08A : 8k bit

Pinouts:

S24CS08A pinout datasheet

 

Other data sheets are available within the file: S24CS01A, S24CS02A, S24CS04A

S24CS08A PDF Datasheet

11N06LT PDF – 55V, 11A, MOSFET – PHB11N06LT

Part Number: 11N06LT, PHB11N06LT

Function: 55V, 11A, MOSFET

Package: SOT-428, SOT404 Type

Manufacturer: NXP Semiconductor, Philips Semiconductor

Images:PHB11N06LT pdf mosfet

Description

This is N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHB11N06LT is supplied in the SOT404 surface mounting package. The PHD11N06LT is supplied in the SOT428 surface mounting package.

A Trench MOS transistor is a type of metal-oxide-semiconductor (MOS) transistor that is constructed using a trench isolation structure. This design allows for better control of the electric field and reduced parasitic effects, making it a popular choice for power devices and high-voltage applications.

Trench MOS transistors find extensive use in power electronics, including motor control, power supplies, automotive applications, and high-voltage converters. They are employed in various devices such as power MOSFETs, insulated-gate bipolar transistors (IGBTs), and trench gate field-effect transistors (TGFETs).

 

Features:

• ’Trench’ technology

• Very low on-state resistance

• Fast switching

• Stable off-state characteristics

• High thermal cycling performance

• Low thermal resistance

 

PHB11N06LT datasheet pinout

11N06LT PDF Datasheet