Pinout

C5071 PDF Datasheet – 500V, 12A, NPN Transistor, 2SC5071

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This post explains for the NPN transistor.

The Part Number is C5071, 2SC5071.

The function of this semiconductor is 500V, 12A, NPN Transistor.

The package is TO-3P Type

Manufacturer: Sanken, Allegro Micro Systems

Image:

components

 

Description

The C5071 is Silicon NPN Triple Diffused Planar Transistor. This NPN Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

Silicon NPN Epitaxial Planar Transistors are fundamental components in electronic circuits, playing a crucial role in amplification, signal processing, and digital logic.

They are widely used in a vast array of electronic devices, including radios, amplifiers, computer processors, and many other applications where signal control and amplification are essential.

Pinouts

C5071 pdf pinout

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 500 V

2. Collector to Emitter Voltage: Vceo = 400 V

3. Emitter to Base Voltage: Vebo = 10 V

4. Collector Current: Ic = 12 A

5. Collector Dissipation : Pc = 100 W ( Tc=25°C )

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications:

1. High Voltage and High Speed Switchihg Transistor

2. Switching Regulator and General Purpose

C5071 PDF Datasheet

C5022 PDF Datasheet – 1500V, NPN Transistor – Hitachi

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This post explains for the transistor.

The Part Number is C5022, 2SC5022.

The function of this semiconductor is 1500V, NPN transistor.

The package is TO-220FM Type

Manufacturer: Hitachi Semiconductor

Preview images :C5022 pinout datasheet

Description

The C5022 is 1500V, 20mA, NPN Transistor.

A silicon NPN triple-diffused transistor refers to a specific type of NPN (Negative-Positive-Negative) bipolar junction transistor (BJT) that is fabricated using silicon as the semiconductor material and incorporates a triple-diffusion process in its construction.

The triple-diffusion process involves creating three distinct diffusion regions within the transistor structure, typically the emitter, base, and collector regions. Each diffusion region is doped with a specific concentration of impurity atoms to control the electrical characteristics of the transistor.

The main advantages of using a tr

Silicon NPN triple-diffused transistors find applications in various electronic circuits and systems that require high-voltage and high-current handling capabilities. They are commonly used in power amplifiers, motor control circuits, high-frequency RF circuits, and other applications where high-power operation and efficient switching are critical. […]

C5022 pdf

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1500 V
2. Collector to Emitter Voltage: Vceo = 1500 V
3. Emitter to Base Voltage: Vebo = 6 V
4. Collector Current: Ic = 20 mA
5. Collector Dissipation: Pc = 2 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications:

1. High voltage amplifier

C5022 Datasheet