Part Number: FMB-G24 ( Marking : FMBG24 ), FMB-G24H
Function: 40V, 10A, Diode
Package: TO-220 2 Pin Type
Manufacturer: Sanken Electronic
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Description
The FMB-G24 is 40V, 10A, Silicon Schottky Barrier Diode.
The Schottky Barrier Diode (SBD) is formed by the junction of a metal contact and a semiconductor material, typically silicon or gallium arsenide. Unlike a p-n junction diode, which uses a p-type and an n-type semiconductor material, the SBD uses a metal and a semiconductor material. The metal is chosen for its low work function, which results in a small barrier height at the metal-semiconductor interface, allowing for efficient carrier injection.
The main advantage of an SBD is its fast switching speed and low forward voltage drop, which makes it ideal for high-frequency and high-speed applications. However, SBDs have a relatively low reverse voltage rating compared to p-n junction diodes and can suffer from thermal instability due to the metal-semiconductor interface.
Structure :
1. Resin Molded
Absolute maximum ratings :
1. Transient Peak Reverse Voltage : VRSM = 45 V
2. Peak Reverse Voltage : VRM = 40 V
3. Average Forward Current : IF(AV) = 10 A ( Refer to Derating of 7 )
4. Peak Surge Forward Current : IFSM = 150 ( 10msec. Half sinewave, one shot )
5. I2t Limiting Value : I2t = 112.5 A2s ( 1msec≤t≤10msec )
6. Junction Temperature: Tj = -40~+150 °C
7. Storage Temperature : Tstg = -40~+150 °C
Pinout ( Package type, physical dimensions and material )
Appearance :
The body shall be clean and shall not bear any stain, rust or flaw.
Applications:
1. High Frequency Rectification
Other data sheets are available within the file: FMB-G14, FMB-G14L, FMB-G24
Diode FMB-G24 Datasheet PDF Download
