Part Number: E13005, KSE13005
Function: 400V, 4A, NPN Silicon Transistor
Package: TO-220 Type
Manufacturer: Fairchild Semiconductor
Images:
Description
E13005 is 400V, 4A, NPN Silicon Transistor. A Silicon NPN Epitaxial Planar Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.
NPN Configuration:
1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.
2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.
3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.
Silicon NPN Epitaxial Planar Transistors are fundamental components in electronic circuits, playing a crucial role in amplification, signal processing, and digital logic. They are widely used in a vast array of electronic devices, including radios, amplifiers, computer processors, and many other applications where signal control and amplification are essential.
Features
1. High Speed Switching
2. Suitable for Switching Regulator and Motor Control
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 700 V
2. Collector to Emitter Voltage: Vceo = 400 V
3. Emitter to Base Voltage: Vebo = 9 V
4. Collector Current: Ic = 4 A
5. Collector Dissipation : Pc = 75 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -65 ~ +150°C
Applications:
1. High Voltage Switch Mode Application
E13005 PDF Datasheet
