Part Number: E13007F2, MJE13007F2, KSE13007F2
Function: 400V, 8A, NPN Silicon Transistor
Package: TO-220F Type
Manufacturer: Fairchild
Images:
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Description
This is 400V, 8A, NPN Silicon Transistor. This Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.
The E13007F2 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch-mode applications such as Switching
Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.
NPN Configuration
1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.
2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.
3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.
Features
1. High Speed Switching
2. Suitable for Switching Regulator and Motor Control
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 700 V
2. Collector to Emitter Voltage: Vceo = 400 V
3. Emitter to Base Voltage: Vebo = 9 V
4. Collector Current: Ic = 8 A
5. Collector Dissipation : Pc = 40 W ( Tc=25°C )
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
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Applications:
1. High Voltage Switch Mode Application
E13007F2 PDF Datasheet
Similar features and reference parts
E13007F2
MJE13007
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