2SC3336 Datasheet – Vcbo=500V, NPN Transistor – Hitachi

Part Number: 2SC3336

Function: Silicon NPN Triple Diffused Transistor

Package: TO-3P Type

Manufacturer: Hitachi -> Renesas Electronics

Pinouts:

2SC3336 datasheet

 

Description

High voltage, high speed and high power switching

Absolute Maximum Ratings

1. Collector to base voltage : VCBO = 500 V
2. Collector to emitter voltage : VCEO = 400 V
3. Emitter to base voltage : VEBO = 10 V
4. Collector current : IC = 15 A
5. Collector peak current : IC(peak) = 25 A
6. Base current : IB = 7.5 A
7. Collector power dissipation : PC*1 = 100 W
8. Junction temperature : Tj = 150 °C

Other data sheets are available within the file: C3336

2SC3336 Datasheet PDF


2SC3336 pdf

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