FDC6303N Datasheet – 25V, MOSFET Array, SOT-23

Part Number: FDC6303N

Function: Digital FET, Dual N-Channel

Package: SOT-23-6 Type

Manufacturer: Fairchild Semiconductor

Image and Pinouts:

FDC6303N datasheet



This is Dual N-Channel 25V, MOSFET Array.

These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.Thisdevice has been designed especially for low voltage applications as a replacement for digital transistors in load switchingapplications. Since bias resistors are not required this one N-Channel FET can replace several digital transistors with different bias resistors like the IMHxA series.



1. 25 V, 0.68 A continuous, 2 A Peak.
(1) RDS(ON) = 0.6 W @ VGS = 2.7 V
(2) RDS(ON) = 0.45 W @ VGS= 4.5 V.

2. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5 V.

3. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model

4. Replace multiple NPN digital transistors (IMHxA series) with one DMOS FET.


Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 25 V

2. Gate to source voltage: VGSS = 8 V

3. Drain current: ID = 0.68 A

4. Maximum Power Dissipation: Pd = 0.9 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C


Other data sheets are available within the file: FDC6303


FDC6303N Datasheet PDF Download

FDC6303N pdf