Part Number: FQP6N60C
Function: 600V, N-Channel MOSFET
Package: TO-220 Type
Manufacturer: Fairchild Semiconductor
Image and Pinouts:
General
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Features
1. 5.5A, 600V, RDS(on) = 2.0Ω @VGS = 10 V
2. Low gate charge ( typical 16 nC)
3. Low Crss ( typical 7 pF)
4. Fast switching
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 5.5 A
4. Avalanche energy : Ear = 12.5 mJ
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Other data sheets are available within the file: 6N60C, FQP6N60, FQPF6N60C
FQP6N60C Datasheet PDF Download
