NAND flash memory is a type of non-volatile memory technology that is widely used for data storage in a variety of electronic devices, ranging from USB drives and memory cards to solid-state drives (SSDs) and embedded systems. It’s called “NAND” because it uses a NAND gate structure in its memory cell design. NAND flash offers high storage density, fast read and write speeds, and relatively low cost compared to other types of non-volatile memory.
Part Number: H27U2G8F2C
Function: 2 Gbit (256M x 8 bit) NAND Flash
Package: TSSOP 48, FBGA63 Pin Type
Manufacturer: Hynix
Images:
Description
H27U2G8F2C series is a 256Mx8bit with spare 8Mx8 bit capacity. The device is offered in 3.0/1.8 Vcc Power Supply, and with x8 and x16 I/O interface Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased
The device contains 2048 blocks, composed by 64 pages. Memory array is split into 2 planes, each of them consisting of 1024 blocks. Like all other 2KB – page NAND Flash devices, a program operation allows to write the 2112-byte page in typical 200us(3.3V) and an erase operation can be performed in typical 3.5ms on a 128K-byte block.
Block Diagram:
Features:
1. DENSITY
– 2Gbit: 2048blocks
2. Nand FLASH INTERFACE
– NAND Interface
– ADDRESS / DATA Multiplexing
3. PAGE READ / PROGRAM
– Random access: 25us (Max)
– Sequential access: 25ns / 45ns (3.0V/1.8V, min.)
– Program time(3.0V/1.8V): 200us / 250us (Typ)
– Multi-page program time (2 pages): 200us / 250us (3.0V/1.8V, Typ.)
H27U2G8F2C PDF Datasheet
