Part Number: H9TQ17ABJTMCUR
Function: 16GB eNAND (x8) / LPDDR3 16Gb(x32)
Package: 221 Ball FBGA Type
Manufacturer: SK Hynix Semiconductor
Images:
Description
This is 16GB eNAND (x8) + 16Gb LPDDR3 (x32).
Features
1. VDD1 = 1.8V (1.7V to 1.95V)
2. VDD2, VDDCA and VDDQ = 1.2V (1.14V to 1.30)
3. HSUL_12 interface (High Speed Unterminated Logic 1.2V)
4. Double data rate architecture for command, address and data Bus;
(1) all control and address except CS_n, CKE latched at both rising and falling edge of the clock
(2) CS_n, CKE latched at rising edge of the clock
(3) two data accesses per clock cycle
5. Differential clock inputs (CK_t, CK_c)
6. Bi-directional differential data strobe (DQS_t, DQS_c)
(1) Source synchronous data transaction aligned to bi-directional differential data strobe (DQS_t, DQS_c)
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Ordering Informations :
H9TQ17ABJTMCUR PDF Datasheet
