IKA08N65H5 Datasheet PDF – 650V, 10.8A, IGBT, Transistor

Part Number: IKA08N65H5, Marking : K08EEH5

Function: 650V, 10.8A, High speed 5 IGBT in TRENCHSTOP 5 technology

Package: TO-220FP Type

Manufacturer: Infineon Technologies

Image and Pinouts:

IKA08N65H5 datasheet

 

Description

This is 650V, 10.8A, High speed 5 IGBT. The IGBT is insulated-gate bipolar transistor.

High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode. 650V DuoPack IGBT and Diode.

 

Features and Benefits:

1. Best-in-Class efficiency in hard switching and resonant topologies

2. Plug and play replacement of previous generation IGBTs

3. 650V breakdown voltage

4. Low QG

5. IGBT copacked with RAPID 1 fast and soft antiparallel diode

6. Maximum junction temperature 175°C

7. Qualified according to JEDEC for target applications

8. Pb-free lead plating; RoHS compliant

9. Complete product spectrum and PSpice Models:

 

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 650 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 10.8 A

4. Power dissipation : Ptot = 31.2 W

5. Operating Junction temperature : Tj = – 40 to 175 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

 

Applications:

1. Solar converters

2. Uninterruptible power supplies

3. Welding converters

4. Mid to high range switching frequency converters

 

Other data sheets are available within the file: 08N65, 08N65H5

 

IKA08N65H5 Datasheet PDF Download


IKA08N65H5 pdf