Part Number: J412, 2SJ412
Function: -100V, 16A, P-Channel MOSFET
Manufacturer: Toshiba Semiconductor
Images:
Description
J412 is -100V, -16A, Silicon P Channel MOS Field Effect Transistor. A P-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of MOSFET that is constructed using a p-type substrate. MOSFETs are electronic devices that are widely used as switches or amplifiers in electronic circuits.
In a P-Channel MOSFET, a thin layer of oxide is grown on the surface of the p-type substrate, and a metal gate is deposited on top of the oxide.
The gate is separated from the substrate by the oxide layer and is electrically insulated from the substrate.
The gate is used to control the flow of current between the source and the drain terminals of the MOSFET.
Features
• 4-V gate drive
• Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.)
• High forward transfer admittance: |Yfs| = 7.7 S (typ.)
• Low leakage current: IDSS = −100 μA (max) (VDS = −100 V)
• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = – 100 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = – 16 A
4. Drain Power Dissipation: Pd = 60 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. DC-DC Converter, Relay Drive and Motor Drive