K170 Datasheet PDF – N-ch, 40V, MOSFET, TO-92, 2SK170

Part Number: K170

Function: -40V, 10mA, MOSFET

Package: TO-92 Type

Manufacturer: Toshiba

Image and Pinouts:

K170 datasheet


This is Silicon N Channel Junction Type Field Effect Transistor (TOSHIBA).


•  Recommended for first stages of EQ and M.C. head amplifiers.

•  High breakdown voltage: VGDS= −40 V


Absolute Maximum Ratings (Ta = 25°C)

1. Gate-Drain Voltage : VGDS = -40 V

2. Gate Current : IG = 10 mA

3. Drain Power Dissipation: Pd = 400 mW

4. Junction temperature : Tj = 125 °C

5. Storage temperature: Tstg = -55 to +125 °C


1. Low Noise Audio Amplifier



K170 Datasheet PDF Download

K170 pdf


Other data sheets are available within the file: 2SK170, K-170