K2012 Datasheet - MOSFET, N-Ch, 250V, 18A, Transistor

Part Number: K2012

Function: 250V, 18A, N-Channel MOSFET, Transistor

Package: TO-220ML Type

Manufacturer: SANYO (Panasonic)

Image and Pinouts:

K2012 datasheet

Description

This is 250V, 18A, N-Channel Silicon MOSFET.

1. Low ON-resistance.

2. Ultrahigh-speed switching.

3. Low-voltage drive.

4. Micaless package facilitating mounting.

Test Circuit :

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 250 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 18 A

4. Allowable Power Dissipation: Pd = 2 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Ultrahigh-Speed Switching

Other data sheets are available within the file: 2SK2012