K2700 Transistor – 900V, 3A, MOSFET, 2SK2700 ( Datasheet PDF )

Part Number: K2700, 2SK2700

Function: 900V, 3A, MOSFET

Package: TO-220 Type

Manufacturer: Toshiba Semiconductor

Images:K2700 pdf pinout

Description

K2700 is 900V, 3A, Silicon N Channel MOS Type Field Effect Transistor. An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.

Features

1. Low drain–source ON resistance : RDS (ON) = 3.7 Ω (typ.)

2. High forward transfer admittance : |Yfs| = 2.6 S (typ.)

3. Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)

4. Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA

K2700 datasheet mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 900 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 3 A

4. Drain Power Dissipation: Pd = 40 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. Chopper Regulator

2. DC–DC Converter and Motor Drive

 

K2700 PDF Datasheet