K3563 PDF Datasheet – 500V, 5A, MOSFET, 2SK3563

This post explains for the N-Channel MOSFET.

The Part Number is K3563, 2SK3563.

The function of this semiconductor is 500V, MOSFET.

The package is TO-220 Type

Manufacturer: Toshiba Semiconductor

Preview images :

K3563 pinout datasheet


The K3563 is Silicon N Channel MOS Type Field Effect Transistor.

A Silicon N Channel MOS (Metal-Oxide-Semiconductor) Type Field Effect Transistor (NMOS FET) is a type of transistor that belongs to the family of field-effect transistors (FETs). It is designed using a silicon semiconductor material and utilizes an N-channel for conduction.

The NMOS FET operates based on the principle of voltage-controlled current flow. It consists of three main components: the source, the drain, and the gate. The source is the terminal through which the current enters, the drain is the terminal through which the current exits, and the gate controls the current flow.

In an NMOS FET, a thin layer of silicon dioxide (oxide) is placed between the gate and the channel region. This oxide layer acts as an insulator and prevents direct electrical contact between the gate and the channel. When a voltage is applied to the gate terminal, an electric field is generated, which modifies the conductivity of the channel.



1. Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.)

2. High forward transfer admittance: |Yfs| = 3.5S (typ.)

3. Low leakage current: IDSS = 100 μA (VDS = 500 V)

4. Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 5  A

4. Drain Power Dissipation: Pd = 35 W (Tc = 25°C)

5. Channel temperature: Tch =  150 °C

6. Storage temperature: Tstg = -55 to +150 °C

K3563 pdf


1. Switching Regulator

K3563 PDF Datasheet