Part Number: K4B4G1646B
Function: 4Gb B-die DDR3 SDRAM ( 256Mx16 )
Package: 96FBGA Type
Manufacturer: Samsung
Image :
Description
The 4Gb DDR3 SDRAM B-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. The chip is designed to comply with the following key DDR3 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset .
Features
1. JEDEC standard 1.5V(1.425V~1.575V)
2. VDDQ = 1.5V(1.425V~1.575V)
3. Programmable CAS Latency(posted CAS): 5,6,7,8,9,10,11,12,13,14
4. Programmable Additive Latency: 0, CL-2 or CL-1 clock
5. 8-bit pre-fetch
6. Bi-directional Differential Data-Strobe
7. Asynchronous Reset
Odering Informations :
Other data sheets are available within the file: K4B4G1646BHCF8, K4B4G1646BHCH9, K4B4G1646BHCK0
K4B4G1646B Datasheet PDF Download
