Part Number: K4B4G1646D
Function: DDR3 SDRAM Memory
Pakcage : 96-Pin FBGA
Manufacturer: Samsung
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Description
The 4Gb DDR3 SDRAM D-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. The chip is designed to comply with the following key DDR3 SDRAM features
such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset.
Features
1. 8 Banks
2. Programmable CAS Latency(posted CAS): 5,6,7,8,9,10,11,13,14
3. Programmable Additive Latency: 0, CL-2 or CL-1 clock
4. 8-bit pre-fetch
5. Bi-directional Differential Data-Strobe
6. Asynchronous Reset
Other data sheets are available within the file: K4B2G0446C, K4B2G0446D, K4B2G0846C, K4B2G0846D, K4B4G0446A
K4B4G1646D Datasheet PDF Download
