Part Number: K50T60, IKW50N60T
Function: 600V, 50A, IGBT, Transistor
Package: TO-247 type
Manufacturer: Infineon Technologies
Images:
Description
The K50T60 is 600V, 50A, IGBT, Transistor.
Features:
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for : – Frequency Converters – Uninterrupted Power Supply Trench and Fieldstop technology for 600 V applications offers : – very tight parameter distribution – high ruggedness, temperature stable behavior – very high switching speed – low VCE(sat) Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel EmCon HE diode Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V IC 50A VCE(sat),Tj=25°C 1.5V Tj,max 175°C Marking Code K50T60 Package TO-247 C G E P-TO-247-3-1 (TO-220AC) • Type IKW50N60T Ordering Code Q67040S4718 Maximum Ratings Parameter Collector-emitter voltage DC collector current, limited by Tjmax TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) Diode forward current, limited by Tjmax TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time 2) Symbol VCE IC Value 600 801) 50 Unit V A ICpuls IF 150 150 100 50 IFpuls VGE tSC Ptot Tj Tstg – 150 ±20 5 333 -40…+175 -55…+175 260 V µs W °C VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s 1) 2) Value limited by bond wire Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.1 Dec-04 Power Semiconductors TrenchStop Series IKW50N60T q Max. Value 0.45 0.8 40 Unit K/W Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation […]
