This post explains for the semiconductor MDD-3752.
The Part Number is MDD3752.
The function of this semiconductor is P-Channel Trench MOSFET.
Package: D-Pak ( TO-252 ) Type
Preview images :
This is 40V, 43A, P-Channel Trench MOSFET. The MDD3752 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. Low RDS(ON), Low Gate Charge can be offering superior benefit in the application.
A P-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of MOSFET that is constructed using a p-type substrate. MOSFETs are electronic devices that are widely used as switches or amplifiers in electronic circuits.
In a P-Channel MOSFET, a thin layer of oxide is grown on the surface of the p-type substrate, and a metal gate is deposited on top of the oxide.
The gate is separated from the substrate by the oxide layer and is electrically insulated from the substrate.
The gate is used to control the flow of current between the source and the drain terminals of the MOSFET.
1. VDS = -40V
2. ID = -43A @VGS = -10V
(1) < 17mΩ @ VGS = -10V
(2 )< 25mΩ @ VGS = -4.5V
2. General purpose applications
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = – 40 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 43 A
4. Power Dissipation: Pd = 50 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C