Part Number: MDD3752RH
Function: -40V, -43A, P-Channel Trench MOSFET
Package: TO-252, D-Pak Type
Manufacturer: MagnaChip
Images:
Description
The MDD3752 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. Low RDS(ON), Low Gate Charge can be offering superior benefit in the application.
A P-channel trench MOSFET is a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that operates using P-channel (positive-channel) conductivity. It is designed to handle high voltage and power levels in various electronic applications.
Features
1. VDS = -40V
2. ID = -43A @VGS = -10V
3. RDS(ON)
(1) < 17mΩ @ VGS = -10V
(2)< 25mΩ @ VGS = -4.5V
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = – 40 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 43 A
4. Total Power Dissipation: Pd = 50 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. Inverters
2. General purpose applications
MDD3752RH PDF Datasheet
