Part Number: MDF4N60B
Function: 600V, 4.6A, N-Channel Trench MOSFET
Package: TO-220F Type
Manufacturer: MagnaChip
Images:
Description
MDF4N60B is 600V, 4.6A, N-Ch, MOSFET.
These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications.
Features
1. VDS = 600V
2. ID = 4.6A
3. RDS(ON) ≤ 2.0Ω @ VGS = 10V @ VGS = 10V
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 4.6 A
4. Total Power Dissipation: Pd = 34.7 W
5. Avalanche energy: Ear = 9.25 mJ
6. Channel temperature: Tch = 150 °C
7. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. Power Supply
2. PFC
3. High Current, High Speed Switching
MDF4N60B PDF Datasheet
