Part Number: MP1008-G
Function: 10A, 800V, Silicon Bridge Rectifier
Manufacturer: Comchip Technology
The MP1008-G is 10A, 800V, Silicon Bridge Diode.
A bridge rectifier is an electronic circuit that converts an alternating current (AC) input into a direct current (DC) output using a bridge configuration of diodes. The purpose of a bridge rectifier is to ensure that the voltage is always positive, even though the input voltage waveform may be alternating in direction. This makes it useful in applications such as power supplies, battery charging, and motor control where a DC voltage is required.
The basic operation of a bridge rectifier is to allow current to flow only in one direction, by using diodes to block any reverse current. The diodes are arranged in a bridge configuration, hence the name “bridge rectifier.” The AC voltage is applied to the diode bridge, and the resulting DC voltage is available at the output terminals.
Bridge rectifiers are commonly used in power supplies for consumer electronics, industrial equipment, and other applications where a DC voltage is needed.
1. Diffused Junction
2. High Current Capability
3. High Case Dielectric Strength
4. High Surge Current Capability
5. Ideal for Printed Circuit Board Application
6. Plastic Material has Underwriters
7. Laboratory Flammability Classification 94V-0
Case: Molded Plastic Terminals: Plated Leads Solderable Per MIL STD-202, Method 208 Weight: 5.4 grams (approx.) Mounting position: Through Hole for #6 Screw D E Dim A B C D E C B Metal Heat Sink KBP Min. Max 14.73 15.75 5.80 6.90 19.00 1.00 O Typical 6.14 5.11 Hole for #6 screw G 3.60 4.00 J 10.30 11.30 2.38×45ºC Typical I All Dimensions in mm Maximum Ratings and Electrical Characteristics Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate currently by 20%. Characteristics Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note1) @ TA = 50ºC MP MP MP MP KBP KBP KBP Symbol 1000-G 1001-G 1002-G 1004-G 1006-G 1008-G 1010-G UNIT VRRM VRWM VR VR(RMS) Io 35 70 140 280 10 420 560 700 V A 50 100 200 400 600 800 1000 V Non-Repetitive Peak Forward Surge Current 8.3ms Single IFSM Half-sine-wave superimposed on rated load (JEDEC Method) Forward Voltage (per element) @ IF=2.0A Peak Reverse Current @ TA=25ºC At Rated DC Blocking Voltage @ TA=100ºC Rating for Fusing (t<8.3ms) (Note2) Typical Thermal Resistance (Note4) Operating and Storage Temperature Range Typical Junction Capacitance (Note3) Note: 200 A VFM IRM I2t RθJA TJ, TSTG CJ 1.1 10 1.0 64 7.5 -55 to +160 110 V uA A2S K/W ºC pF 1. Non-repetitive for t>1ms and <8.3ms. 2. Thermal resistance junction to ambient mounted on PC board with 13.0 x 13.0 x 0.03 mm thick land areas. 3. Measured at 1.0MHz and applied reverse voltage of 4.0V D.C. 4. Thermal resistance junction to case per element. “-G” suffix designated RoHS compliant version Comchip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com Page1 Silicon Bridge Rectifiers MP1000-G THRU MP1010-G (RoHS Device) Rating and Characteristic Curve (MP1000-G thru MP1010-G) 10 10 I AV, Average forward OUTPUT current ( A ) Resistive or Inductive load 8 I F , Forward current ( A ) 1.0 6 4 0.1 Tj = 25 o C Pulse width = 300uS 2 0 25 50 75 100 125 0.01 0 0.4 0.8 1.2 1.6 T A , Ambient Temperature ( o C) V F , Instantaneous Forward Voltage (V) 240 10 Tc = 50 o C Single half sine-wave JEDEC method 200 I R, Instantaneous Reverse Current ( A ) I F, Peak Forward Surge Current ( A ) Tj =100o C 160 1.0 120 80 0.1 40 Tj =25o C 0 1.0 10 100 0.01 0 40 80 120 Number of Cycles at 60Hz Percent of Rated Peak Reverse Voltage (%) “-G” suffix designated RoHS compliant version Comchip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptec […]