P6N60FI Datasheet – 600V, 3.8A, MOSFET – STP6N60FI

Part Number: P6N60FI, STP6N60FI

Function: 600V, 3.8A, N-Channel MOSFET

Package: ISOWATT 220 Type

Manufacturer: ST Microelectronics

Images:P6N60FI pinout pdf

Description

P6N60FI is 600V, 3.8A, N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR. An N-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of MOSFET that is commonly used in electronic circuits for switching and amplification. It is called an enhancement mode MOSFET because its operation is enhanced by the presence of an external voltage.

In an N-channel enhancement mode MOSFET, the conductive channel is formed by applying a positive voltage to the gate terminal, which creates an electric field that attracts negatively charged electrons from the source region to the channel region. This increases the conductivity of the channel and allows current to flow between the source and drain terminals.

One of the key advantages of an N-channel enhancement mode MOSFET is its ability to operate with very low voltage and power levels, which makes it well-suited for use in battery-powered devices. It also has a high input impedance, which makes it compatible with digital logic circuits and other low-power devices.

Features :

1. TYPICAL RDS(on) = 1 Ω

2. AVALANCHE RUGGED TECHNOLOGY

3. 100% AVALANCHE TESTED

4. REPETITIVE AVALANCHE DATA AT 100°C

5. APPLICATION ORIENTED CHARACTERIZATION

P6N60FI datasheet mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 3.8 A

4. Total Power Dissipation: Ptot = 40 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -65 to +150 °C

Applications:

1. HIGH CURRENT, HIGH SPEED SWITCHING

2. SWITCH MODE POWER SUPPLIES (SMPS)

3. CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL

4. LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT

P6N60FI Datasheet PDF