Part Number: P6N60FI, STP6N60FI
Function: 600V, 3.8A, N-Channel MOSFET
Package: ISOWATT 220 Type
Manufacturer: ST Microelectronics
Images:
Description
P6N60FI is 600V, 3.8A, N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR.
Features :
1. TYPICAL RDS(on) = 1 Ω
2. AVALANCHE RUGGED TECHNOLOGY
3. 100% AVALANCHE TESTED
4. REPETITIVE AVALANCHE DATA AT 100°C
5. APPLICATION ORIENTED CHARACTERIZATION
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 3.8 A
4. Total Power Dissipation: Ptot = 40 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -65 to +150 °C
Applications:
1. HIGH CURRENT, HIGH SPEED SWITCHING
2. SWITCH MODE POWER SUPPLIES (SMPS)
3. CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL
4. LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT
P6N60FI Datasheet PDF
