Part Number: PHE13003AU
Function: 400V, 1.5A, NPN Power Transistor
Package: SOT-533 type
Manufacturer: Philips Semiconductors, NXP Semiconductors
Description
This is NPN Power Switching Transistor.
High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.
Features
QUICK REFERENCE DATA :
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
1. VCESM Collector-emitter voltage peak value ( VBE = 0 V ) = 700 V
2. VCBO Collector-Base voltage (open emitter) = 700 V
3. VCEO Collector-emitter voltage (open base) = 400 V
4. IC Collector current (DC) = 1.5 A
5. ICM Collector current peak value = 3 A
6. Ptot Total power dissipation Tmb ≤ 25 °C = 50 W
7. VCEsat Collector-emitter saturation voltage ( IC = 1.0 A;IB = 0.25 A ) = 1.0 V
8. hFE ( IC = 1.0 A; VCE = 5 V ) = 25
9. tfi Fall time (Inductive) ( IC = 1.0 A; IBON = 0.2 A ) = 150 ns