Part Number: RF3826
Function: 9W GaN Wide-Band Power Amplifier 30MHz to 2500MHz
Package: SO 8 Pin Type
Manufacturer: RF Micro Devices
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Description
The RF3826 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios, and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design.
The RF3826 is an input matched GaN transistor packaged in an air cavity copper package which provides excellent thermal stability through the use of advanced heat-sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth.
Features
1. Advanced GaN HEMT Technology
2. Output Power of 9W
3. Advanced Heat-Sink Technology
4. 30MHz to 2500MHz Instantaneous Bandwidth
5. Input Internally Matched to 50 Ω
6. 28V Operation Typical Performance
Other data sheets are available within the file:
RF3826PCBA-410, RF3826PCBA-411, RF3826S2, RF3826SB
RF3826 Datasheet PDF Download
