SS8050D331 PDF – 25V, 1500mA, NPN Transistor

Part Number: SS8050D331

Function: 25V, 1500mA, NPN Transistor

Package: TO-92 Type

Manufacturer: YS Semicondcutor

Images:SS8050D331 pdf pinout

Description

SS8050D331 is 25V, 1.5A, NPN Transistor. This is a general-purpose NPN bipolar junction transistor (BJT) designed for medium-current amplification and switching applications. With a relatively high collector current capability for a TO-92 package, it is widely used in driver stages, low-power switching, and signal amplification circuits.

Features

  • NPN silicon transistor
  • High collector current capability (up to 1.5A)
  • Low saturation voltage (VCE(sat))
  • Good DC current gain (hFE) characteristics
  • Compact TO-92 package
  • Suitable for switching and amplification

SS8050D331 datasheet transistor

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 40 V

2. Collector to Emitter Voltage: Vceo = 25 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 1500 mA

5. Collector Dissipation : Pc = 1 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Typical Circuit Usage

  • Low-side switch (relay, LED, buzzer)
  • Signal amplification stage
  • Driver transistor for MOSFET or higher power stage
  • Audio pre-amplifier (low power)

How to Choose This Part

  • Use when moderate current (<1A practical) is required in a compact package
  • Good choice for cost-sensitive designs
  • Prefer TO-220 devices if continuous current >1A is required
  • Consider MOSFET alternatives for higher efficiency switching

Applications

  • Consumer electronics
  • Power switching circuits
  • Relay drivers
  • Embedded control systems
  • General-purpose amplification

Alternative / Equivalent Products

  • S8050 / SS8050 (generic variants)
  • 2N2222 (lower current alternative)
  • PN2222A
  • BC337
  • BD139 (higher power alternative, TO-126)

SS8050D331 PDF Datasheet

SS8050D331 pdf

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